IXYS Introduces GigaMOSTM Trench Power MOSFETs

IXYS Introduces GigaMOSTM Trench Power MOSFETs

IXYS Corporation introduces new 150V-300V GigaMOSTM Trench Power MOSFETs. These power MOSFETs provide high current capability (up to 280A), eliminating the need for multiple components when paralleling lower current MOSFET devices in high power applications. The resultant effect is a reduction in part count, as well as the number of required drive components, improving over-all system reliability and simplicity. These power MOSFETs are optimized for superior switching performance in a broad range of high power switching applications.
GigaMOSTM Trench Power MOSFETs incorporate IXYS’ Advanced Trench Technology to provide extremely low Rds(on) and gate charge (Qg), while maintaining superior switching performance and ruggedness.

 

For Product Datasheets & Further Infomation Click HERE